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0512-2508

Electronic devices

Also listed as: התקנים אלקטרוניים

Semiconductor device physics: what is actually happening inside the transistor. The complement to MEMS for anyone aiming at micro-systems or the fabs.

Semester
Not fixed
Weekly hours
4h
Counts as
Faculty electives
Interest areas
Miniaturised systems and materials

What it covers

Topics

  • Semiconductor physics: carriers, drift and diffusion
  • The pn junction
  • Bipolar transistor physics and models
  • MOSFET physics and models
  • Introduction to device fabrication

Results worth carrying out

  • Drift–diffusion

    Jn=qμnnE+qDnnJ_n = q\mu_n n E + q D_n \nabla n
  • Shockley diode

    I=I0(eqVkT1)I = I_0\left(e^{\frac{qV}{kT}} - 1\right)
  • MOSFET in saturation

    ID=12μnCoxWL(VGSVth)2I_D = \tfrac{1}{2}\mu_n C_{ox} \frac{W}{L}\left(V_{GS} - V_{th}\right)^2

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The topic outlines are not official syllabi. The university publishes a catalogue blurb per course, not lecture-by-lecture material, so each outline describes what a course of that name, at those hours, with those prerequisites teaches at engineering schools generally, cross-checked against the standard textbook for the subject. Treat it as an informed map, not as a transcript of the lectures.